Prof. Dr Irina V. Antonova graduated from the Novosibirsk State Technical University (Department of Physics and Engineering) in 1979. Since 1981 she has been working at the Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science. Presently, I.V. Antonova occupies a leading researcher position ISP SB RAS. The scope of current research and professional activities of Prof. Dr I.V. Antonova includes chemical functionalization of graphene, fabrication of graphene / fluorographene heterostructures and arrays of graphene quantum dots embedded in a fluorographene matrix, 2D printed technologies with graphene based materials. Presently, Prof. Dr Irina V. Antonova has above 280 papers. Sum of the times cited is above 1000, h-index is equal to 14.